![]() ![]() For resonant MEMS (microelectromechanical systems) devices, stability is important for good performance.Ī MEMS bulk acoustic wave (BAW) resonator that includes one or more guard rings to create recessed space(s) will be disclosed herein. Microelectronic devices that include frequency selective components are important for many electronic products requiring stable frequency signals or ability to discriminate between signals based on frequency diversity. In the drawings, like elements are denoted by like reference numerals for consistency. DETAILED DESCRIPTION OF EMBODIMENTS OF THE DISCLOSURE ![]() 10 is a flow chart illustrating design of a MEMS resonator device. 9 is a cross sectional view of an example package integrated circuit that includes the example MEMS acoustic wave resonator of FIG. 8 is a cross section view another example MEMS resonator that is a fully released resonator structure.įIG. 7 is a top view of the example MEMS acoustic wave resonator device of FIG. 6 is a cross sectional view of an example MEMS acoustic wave resonator device with periodic guard rings to create periodic recessed spaces.įIG. 5 is a Smith chart illustrating operation of the MEMS resonator device of FIG. 4 is a cross sectional view of another example MEMS acoustic wave resonator device having a guard ring with a recessed space to the edge of the electrode.įIG. 3 is cross sectional view of an example MEMS acoustic wave resonator device having a guard ring with a recessed space to the edge of the electrode.įIG. ![]() 2 is a set of Smith charts illustrating operation of a prior art MEMS acoustic wave resonator device.įIG. 1 is a schematic of an example oscillator circuit that includes a MEMS acoustic wave resonator device.įIG. A first guard ring is positioned on the second electrode spaced from the perimeter edge of the second electrode, wherein the first guard ring has a thickness and a width and is spaced from the perimeter edge of the second electrode by a distance. The piezoelectric member has a first electrode covering a first surface of the piezoelectric member and a second electrode covering a second surface of the piezoelectric member opposite the first electrode, the second electrode being bounded by a perimeter edge. A piezoelectric member is mounted on the base substrate. SUMMARY OF THE DISCLOSUREĪn example of the present disclosure provides a MEMS acoustic wave resonator that is formed on a base substrate. Otis, “A 22 μW, 2.0 GHz FBAR oscillator,” 2011 IEEE Radio Frequency Integrated Circuits Symposium, Baltimore, Md., 2011, pp. Chandrakasan, “A 0.68V 0.68 mW 2.4 GHz PLL for Ultra-Low Power RF Systems.” 2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) (May 2015) A. Several types of MEMS acoustic wave resonator-based oscillators are known, see for example: Paidimarri, Arun, Nathan Ickes, and Anantha P. Aluminum nitride and zinc oxide are two common piezoelectric materials used in MEMS acoustic wave resonators. BAW resonators using piezoelectric films with thicknesses ranging from several micrometers down to tenth of micrometers resonate in the frequency range of roughly 100 MHz to 10 GHz. Multiple approaches have been used, such as: wire-bonding, flip-chip, CMOS-MEMS, etc.Ī bulk acoustic wave (BAW) resonator is a MEMS device that includes a piezoelectric thin film sandwiched between two electrodes and acoustically isolated from the surrounding medium. Integrating the MEMS resonators with the integrated circuit chips in a regular semiconductor packaging is usually a challenging aspect of such devices. Microelectromechanical system (MEMS) resonators are used for multiple applications, among them low-power, low-phase noise, high stability oscillators. This disclosure relates to bulk acoustic wave resonators that have guard rings having recessed space from electrode edge and periodic designs. ![]()
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